Excitation and polarization effects in semiconductor four-wave-mixing spectroscopy
- 15 May 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 49 (20) , 14382-14386
- https://doi.org/10.1103/physrevb.49.14382
Abstract
The dependence of optical four-wave-mixing (FWM) signals in semiconductors on carrier density and laser-field polarization is investigated. The theoretical and experimental analysis reveals the importance of the excitation-induced dephasing processes for the understanding of numerous published results on polarization selections rules in FWM signals. Even apparently contradictory earlier findings can be explained with this theoretical model.Keywords
This publication has 23 references indexed in Scilit:
- Exciton spin dynamics in quantum wellsPhysical Review B, 1993
- Spin-flip-induced hole burning in GaAs quantum wells: Determination of the exciton Zeeman splittingPhysical Review Letters, 1992
- Exciton spin dynamics in GaAs heterostructuresPhysical Review Letters, 1992
- Subpicosecond spin relaxation dynamics of excitons and free carriers in GaAs quantum wellsPhysical Review Letters, 1991
- Subpicosecond four-wave mixing in GaAs/As quantum wellsPhysical Review B, 1991
- ‘‘Spin’’-flip scattering of holes in semiconductor quantum wellsPhysical Review B, 1991
- Carrier relaxation and luminescence polarization in quantum wellsPhysical Review B, 1990
- Measurement of phonon-assisted migration of localized excitons in GaAs/AlGaAs multiple-quantum-well structuresPhysical Review Letters, 1990
- Picosecond Phase Coherence and Orientational Relaxation of Excitons in GaAsPhysical Review Letters, 1986
- Ultrafast Phase Relaxation of Excitons via Exciton-Exciton and Exciton-Electron CollisionsPhysical Review Letters, 1986