Metal–anion bond strength and room temperature diffusion at metal/GaAs interfaces: Transition versus rare-earth versus Au metal overlayers

1 May 1986

journal article
Published by American Vacuum Society in Journal of Vacuum Science & Technology A

Vol. 4 (3) , 965-968
https://doi.org/10.1116/1.573766

Abstract

We discuss synchrotron radiation photoemission results for several room temperature transition metal and rare–earth metal GaAs(110) interfaces (Ce, Sm, V, Cr) and Au. Analysis of normalized core intensity attenuation curves shows anion trapping that varies with, but is not entirely controlled by, the ionicity of interface bonds. In particular, very narrow reacted regions were observed for Ce and Sm [3–5 monolayers (ML)]. The reacted region is much wider for the transition metals (9 ML for V, 19 ML for Cr), reflecting a less effective barrier for intermixing. For Au, the amount of As and Ga in the near surface region greatly exceeds that for the transition metals.

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