GaAs/GaAlAs asymmetric Mach-Zehnder demultiplexer with reduced polarization dependence

Abstract
A two-channel GaAs/AlGaAs asymmetric Mach-Zehnder wavelength demultiplexer with reduced polarization dependence was demonstrated. The device was fabricated on a single heterostructure comprising a 1.45- mu m-thick layer of GaAs on a 6.0- mu m-thick Ga/sub 0.85/Al/sub 0.15/As buffer layer. The epitaxial layers were grown by MOCVD (metalorganic chemical vapor deposition) on an n/sup +/ GaAs substrate. The single-mode rib waveguides, 3 mu m wide and 0.29 mu m high, were fabricated using standard photolithographic techniques followed by chemical etch and removal of the resist mask. Extinction ratios of 24.1 dB for transverse electric (TE) and 22.5 dB for transverse magnetic (TM) polarized light were measured on a device with an anti-reflection coating on its input and output facets. The active length of the device is approximately 6.5 mm and total loss of 1.1 dB was obtained in a 16-mm-long chip.