A new cryoelectronic device family
- 1 August 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (8) , 1802-1806
- https://doi.org/10.1109/T-ED.1987.23154
Abstract
Analog and digital cryoelectronic applications of a novel hybrid device family combining both semiconducting and superconducting elements have been demonstrated experimentally. The proposed device concept is based on the magnetic control of the filamentary current flow during avalanche breakdown in bulk semiconductors at low temperatures. Power losses are minimized by using superconducting lines for the generation of the magnetic control fields and for the interconnections. Our device configuration represents an interesting concept for the development of ultrafast electronic circuits requiring high packing density and correspondingly low power dissipation.Keywords
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