Silicon Dioxide Thin Films Prepared by Chemical Vapor Deposition from Silicon Tetraacetate
- 1 December 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (12A) , L2253-2254
- https://doi.org/10.1143/jjap.28.l2253
Abstract
Silicon dioxide thin films were prepared by a low-temperature chemical vapor deposition method. The raw material was silicon tetraacetate which is nontoxic and easy to handle. At a reaction temperature above 150°C, the thin films were obtained with a high deposition rate. The reaction temperature and the deposition rate are comparable to the corresponding values in the chemical vapor depositions of SiO2 from hydride and alkoxide. In addition, the deposition can be carried out in air. Silicon tetraacetate appears to offer a viable alternative to silicon hydride and alkoxide for low-temperature SiO2 production.Keywords
This publication has 3 references indexed in Scilit:
- Silicon Dioxide Thin Films Prepared by Thermal Decomposition of Silicon TetraacetateJapanese Journal of Applied Physics, 1988
- Low Temperature Pyrolytic Deposition of High Quality SiO2Journal of the Electrochemical Society, 1987
- An Infrared Absorption Study of LTCVD Silicon DioxideJournal of the Electrochemical Society, 1983