A study of the layer and junction properties of boron implantation in silicon
- 23 February 1976
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 40 (2) , 169-181
- https://doi.org/10.1080/00207217608920556
Abstract
Results of sheet conductivity and Hall effect measurements on boron implanted silicon samples are reported for both isothermal and isochronal annealing sequences. The activation energy of the implanted atoms was calculated and its dependence on implantation dose and substrate temperature during implantation is studied. From the behaviour of I/V characteristics during the annealing process, the location and activation energy associated with the quenching of the generation/recombination centres is derived.Keywords
This publication has 8 references indexed in Scilit:
- A study of 2 MeV helium-irradiated phosphorus-diffused siliconPhilosophical Magazine, 1974
- The electrical behaviour of abrupt ion implanted and diffused P+N junctionsRadiation Effects, 1971
- Lifetime effects in ion implanted siliconRadiation Effects, 1970
- Correlation of electron microscope studies with the electrical properties of boron implanted siliconRadiation Effects, 1970
- Electrical Behavior of Group III and V Implanted Dopants in SiliconJournal of Applied Physics, 1969
- The measurement of electrical activity and Hall mobility of boron and phosphorus ion-implanted layers in silicon†International Journal of Electronics, 1969
- Dissociative Diffusion of Nickel in Silicon and Self-Diffusion of SiliconJapanese Journal of Applied Physics, 1967
- Annealing of γ-ray irradiated N-type germaniumJournal of Physics and Chemistry of Solids, 1963