Chemical Vapor Deposition Of Silicon Carbide For Large Area Mirrors
- 3 May 1982
- conference paper
- Published by SPIE-Intl Soc Optical Eng
- p. 131-134
- https://doi.org/10.1117/12.932999
Abstract
CVD-SiC has been identified as the leading mirror material for high energy synchrotron radiation because of its high K/a ratio and its ability to be super-polished to <10 A rms roughness. Technology already exists for depositing SiC over large areas (approximately 70 cm x 20 cm). The CVD process, substrate selection, and mirror design considerations are discussed.Keywords
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