A Vacum Evaporated Random Access Memory
- 1 October 1960
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE
- Vol. 48 (10) , 1728-1731
- https://doi.org/10.1109/jrproc.1960.287524
Abstract
The basic miultiple-layer magnetic thin film structure described here has been shown to have special and desirable properties in coincident-signal switching applications such as those employed in binary random access memories. Its demonstrated advantages in this application include: 1) magnetic turnover times as low as 30m ¿sec; 2) wide latitude in selection currents, with greater than twelve-fold variations giving no appreciable change in the compensated signal-to-noise ratio of the cell's output; 3) extremely small volume of, typically, 0.025 inch ×0.010 inch ×0.0007 inch per complete cell; and 4) automated, microminiaturized production and assembly based on vapor phase handling techniques.Keywords
This publication has 4 references indexed in Scilit:
- Operating Characteristics of a Thin Film MemoryJournal of Applied Physics, 1959
- The Laddic - A Magnetic Device for Performing LogicBell System Technical Journal, 1959
- High Speed Coincident-Flux Magnetic Storage PrinciplesJournal of Applied Physics, 1956
- The TransfiuxorProceedings of the IRE, 1956