Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide

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22 March 1999

journal article
Published by National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka) (Publications) in Semiconductor physics, quantum electronics and optoelectronics

Vol. 2 (1) , 124-132
https://doi.org/10.15407/spqeo2.01.124

Abstract

No abstract available

This publication has 5 references indexed in Scilit:

Chemical and electrical properties at the annealed Ti/GaAs(110) interface
Journal of Vacuum Science & Technology A, 1988
Nonhydrogenic Exciton and Energy Gap of GaAs
Physical Review Letters, 1972
Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor Center
Physical Review B, 1968
Fine Structure of the Infrared Absorption and Emission Spectra of ${Cu}^{2 +}$ in ZnS and CdS Crystals
Physical Review B, 1965
Effect of Deep Levels on the Optical and Electrical Properties of Copper-Doped GaAs $p - n$ Junctions
Physical Review B, 1965