Abstract
Technologies applied for silicon on insulator (SOI) are briefly described as well as their specific properties. Conditions of realizing SOI not only imply obtaining a perfect monocrystalline silicon layer but also an undamaged stack of (SOI) layers and a defect-free substrate. Technological problems encountered by applying the various SOI techniques are described and discussed in some detail. Past, present and future of SOI will be evaluated in some aspects

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