Short-circuit current and energy efficiency enhancement in a low-dimensional structure photovoltaic device

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Abstract
We have studied the forward bias behavior of AlGaAs/GaAs p‐i‐n multiquantum well (MQW) photodiodes. In samples with low background impurity levels in the intrinsic region the high quantum efficiency observed in reverse bias is maintained into forward bias even for carriers photoexcited in the wells. We compare our MQW devices with structures which are identical apart from having AlGaAs intrinsic regions without quantum wells. The short‐circuit currents in the MQW structures are much higher than in the control samples though the open‐circuit voltages are somewhat smaller. In one case the energy conversion efficiency of the MQW device in white light is 110% higher than the control. We discuss the implications of our results for the development of low‐dimensional structure solar cells.