Excitons in Degenerate Semiconductors
- 15 January 1967
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 153 (3) , 882-889
- https://doi.org/10.1103/physrev.153.882
Abstract
The band-to-band optical absorption is calculated for a direct-band-gap semiconductor that has one band degenerate or type. The degenerate band is treated as a high-density Fermi gas. It is shown that exciton states, arising from the electron-hole Coulomb attraction, still affect the optical absorption. The calculations show that exciton states cause a logarithmic singularity in the absorption at the Burstein edge. This singularity is present at a moderate density of electrons or holes in the degenerate band, but it gradually disappears in the high-density limit. Lifetime broadening could make the logarithmic singularity difficult to observe at higher densities.
Keywords
This publication has 31 references indexed in Scilit:
- Absorption Data of Laser-Type GaAs at 300° and 77°KJournal of Applied Physics, 1964
- Perturbation theory in statistical mechanics and the theory of superconductivityAnnals of Physics, 1960
- Infrared Absorption and Electron Effective Mass in-Type Gallium ArsenidePhysical Review B, 1959
- Intensity of Optical Absorption by ExcitonsPhysical Review B, 1957
- Bound Electron Pairs in a Degenerate Fermi GasPhysical Review B, 1956
- Infrared Absorption of Indium AntimonidePhysical Review B, 1955
- Electrical and Optical Properties of Intermetallic Compounds. I. Indium AntimonidePhysical Review B, 1954
- Anomalous Optical Behavior of InSb and InAsPhysical Review B, 1954
- Anomalous Optical Absorption Limit in InSbPhysical Review B, 1954
- Optical Properties of Indium AntimonidePhysical Review B, 1953