High-current, planar-doped pseudomorphic hemts Ga _0.4 In _0.6 As/Al _0.48 In _0.52 As HEMTs

26 May 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (11) , 717-718
https://doi.org/10.1049/el:19880485

Abstract

The letter reports the first successful growth and fabrication of high-performance, planar-doped pseudomorphic GaInAs/AlInAs HEMTs. Hall mobilities as high as 11900cm²/Vs (300 K) with sheet-electron concentrations of 2.4 × 10¹²cm⁻² were measured for the heterostructures. A drain-saturation current of 1 A/mm, a transconductance of 420mS/mm, and an extrapolated f₁ of 64 GHz were achieved in a 0.5 μm gate-length HEMT.

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High-current, planar-doped pseudomorphic hemts Ga 0.4 In 0.6 As/Al 0.48 In 0.52 As HEMTs

Abstract

Keywords

High-current, planar-doped pseudomorphic hemts Ga _0.4 In _0.6 As/Al _0.48 In _0.52 As HEMTs