Resistivity Recovery of Thin Sputtered Aluminium Films
Open Access
- 1 January 1976
- journal article
- research article
- Published by Wiley in Active and Passive Electronic Components
- Vol. 3 (2) , 85-89
- https://doi.org/10.1155/apec.3.85
Abstract
Aluminium films were r.f. sputtered onto vycor slides. Annealing induces a decrease of resistivity at temperatures between 300 K and 414 K. Isothermal resistance recovery occurs with a constant rate depending on the annealing temperature; the activation energy increases from 0.3 eV to 0.4 eV for increasing thickness. The resistivity recovery is attributed to a surface reordering phenomenon, which is in good agreement with the Mayadas–Shatzkes conduction occuring in these polycrystalline films, with a thickness independent mean grain diameter. Reflections on grain boundaries are independent of ageing, whereas the reflection coefficient on the upper surface is increased.Keywords
This publication has 0 references indexed in Scilit: