Explanation of light induced ESR in a-Si:H; dangling bonds with a positive correlation energy
- 1 January 1980
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 35-36, 651-656
- https://doi.org/10.1016/0022-3093(80)90278-1
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Recombination in plasma-deposited amorphous Si:H. Luminescence decayPhysical Review B, 1979
- Density of States in the Gap of Tetrahedrally Bonded Amorphous SemiconductorsPhysical Review Letters, 1978
- Defect states in amorphous siliconPhilosophical Magazine Part B, 1978
- Negative-States in the Gap in Hydrogenated Amorphous SiliconPhysical Review Letters, 1978
- Luminescence studies of plasma-deposited hydrogenated siliconPhysical Review B, 1978
- Optically induced electron spin resonance in doped amorphous siliconSolid State Communications, 1977
- Model for the Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1975