Monte Carlo simulation of the GaAs permeable base transistor

1 February 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 34 (2) , 154-159
https://doi.org/10.1109/T-ED.1987.22901

Abstract

A two-dimensional multiparticle Monte Carlo (MC) method for the solution of the Boltzmann transport equation has been implemented and the results compared with the conventional drift-diffusion equation solution obtained for both a uniformly doped and an n+-n-n+GaAs permeable base transistor structure. Improved high-frequency performance is predicted by the MC simulation. Two-dimensional boundary conditions for a "regional" MC analysis have been applied to reduce the computer time that would be spent largely in analyzing the device retarding field region and the neutral regions of the device. The dc parameters, I-V characteristics, and unity current gain-frequency (fT) are discussed. In the n+-n-n+doped structure, a cooling effect was found that significantly enhances the device frequency performance by reducing the satellite valley population of electrons.

Keywords

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