Prospects of Ga/In/Al–N Nanometer Devices: Electronic Structure, Scattering Rates, and High Field Transport
- 1 November 1997
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 204 (1) , 133-135
- https://doi.org/10.1002/1521-3951(199711)204:1<133::aid-pssb133>3.0.co;2-e
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Comparison of high field electron transport in GaN and GaAsApplied Physics Letters, 1997
- GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect TransistorsMRS Bulletin, 1997
- Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InNPhysical Review B, 1996
- Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopyApplied Physics Letters, 1996
- Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InNMRS Internet Journal of Nitride Semiconductor Research, 1996
- Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structureJournal of Applied Physics, 1995
- Emerging gallium nitride based devicesProceedings of the IEEE, 1995
- Optical and structural properties of III-V nitrides under pressurePhysical Review B, 1994
- Tight-binding view of alloy scattering in III-V ternary semiconducting alloysPhysical Review B, 1984