Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
- 1 January 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (1S) , 477-479
- https://doi.org/10.1143/jjap.38.477
Abstract
Coulomb oscillation was clearly observed at room temperature in the single electron transistor fabricated by atomic force microscopy (AFM) nano-oxidation process. In order to obtain a clear Coulomb oscillation at room temperature, new and improved fabrication processes and measurement systems such as a pulse-mode AFM nano-oxidation process and a triaxial active feedback measurement system are introduced. The Coulomb oscillation peaks appear with the period of 1.9 V at the drain bias conditions of 0.25 V and 0.3 V. The current modulation rate ranges from 20% to 30%.Keywords
This publication has 2 references indexed in Scilit:
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