Unique determination of AlGaAs/GaAs HBT's small-signal equivalent circuit parameters
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 259-262
- https://doi.org/10.1109/gaas.1993.394456
Abstract
A new parameter extraction technique for heterojunction bipolar transistors (HBTs) is described. Utilizing a novel low frequency extraction algorithm, the intrinsic elements and the resistive parasitics are obtained. The overall small-signal equivalent circuit of HBTs is then determined based on those extracted element values. This technique advances current equivalent circuit modeling capability of HBTs by minimizing the interactive computer optimization/simulation process and removing the need of special test structures.<>Keywords
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