Vapor pressure dependence of native defect concentrations in GaP
- 1 December 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (12) , 9208-9209
- https://doi.org/10.1063/1.330391
Abstract
Native defect concentrations in GaP were calculated under solid-vapor equilibrium conditions to explain the annealing effects. Total number of native defects at a fixed temperature was minimized at a certain phosphorus pressure. This pressure is consistent with the optimum pressure reported in annealing experiments.This publication has 9 references indexed in Scilit:
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