The Effects of Fluorine Atoms in High‐Dose Arsenic or Phosphorus Ion Implanted Silicon

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Abstract
The effects of an additional fluorine ion implantation into highly doped n‐type silicon were studied. The additional F ion implantation technique reduced the diffusion enhancement of As and P, the growth of extrinsic defects, and dopant activation in n‐type silicon. F atoms were observed at the region where a high concentration of group V dopants existed. From these observations, we propose that F atoms are trapped by group V dopants in n‐type silicon due to the high electronegativity of F atoms. F atoms prevent As+‐SiI − and P+‐SiI − pairs from forming, the formation and dissociation of which cause diffusion enhancement and extended defects.

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