Preparation of GaAs surfaces for epitaxial deposition
- 31 December 1967
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (12) , 1199-IN4
- https://doi.org/10.1016/0038-1101(67)90061-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Oriented growth of semiconductors—II homoepitaxy of gallium arsenideJournal of Physics and Chemistry of Solids, 1966
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965
- Purity of Hydrogen Permeating Through Pd, Pd-25% Ag, and NiReview of Scientific Instruments, 1963
- Galvanic Determination of Traces of Oxygen in GasesNature, 1952