High Breakdown Voltage AlGaN/GaN MIS-HEMT with SiN and TiO/sub 2/ Gate Insulator

Publisher Website

10 March 2006

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 280-281
https://doi.org/10.1109/isdrs.2005.1596094

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device
Solid-State Electronics, 2004
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
IEEE Transactions on Electron Devices, 2003
Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002