High performance ion-implanted low noise GaAs MESFET's

1 November 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 3 (11) , 327-329
https://doi.org/10.1109/EDL.1982.25589

Abstract

Low noise GaAs MESFET's fabricated by ion-implanting into AsCl3VPE buffer layers have demonstrated not only excellent dc and RF performance, but also a highly reproducible process. The average noise figure and associated gain of four device lots at 12 GHz are 1.6 dB and 10.0 dB, respectively. The standard deviation of noise figure and associated gain from device lot to lot are 0.03 dB and 0.19 dB, respectively. And the standard deviation of noise figure and associated gain from device to device for 35 devices over four lots are 0.13 dB and 0.47dB, respectively. The best device performance includes a 1.25 dB noise figure with 10.46 dB associated gain at 12 GHz for a 0.5 µm × 300 µm FET structure. These results demonstrate the excellent performance and process consistency of ion implanted MESFET's.

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