Crystal growth of SnO2 and other MO2 (M = Ti, Zr, Hf) oxides by flux of B2O3-V2O5 system

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Abstract
Single crystals of SnO2 and MO2 (M = Ti, Zr, Hf) oxide were grown from flux of B2O3V2O5 system. Mixtures of the flux and the starting powder of Zn2SnO4, TiO2, ZrO2, or HfO2 were soaked at a temperature of 1030–1340°C for 10–72 hr and then were cooled down to 900°C at a rate of 5°C/hr. Grown crystals of SnO2 were pale brown needles. An increase in V2O5 content of the flux (up to V2O5/B2O3 ratio equal to 2) or in the soaking temperature increases the crystal size. A largest crystal with the size of 15.0 × 0.4 × 0.4 mm was obtained in the case of V2O5/B2O3 = 2. Crystals of TiO2 were black needles or platelets, and those of ZrO2 and HfO2 were yellowish, transparent needles or blocks. The maximum size of TiO2, ZrO2 or HfO2 crystal was 12.0 × 0.1 × 0.1 mm, 4.0 × 0.3 × 0.3 mm or 11.0 × 0.6 × 0.6 mm, respectively.The long axis of the crystals was all C‐axis and main faces on the crystals were of {100} and/or {110} families. All these crystals were found to include the impurities of boron and vanadium.The electrical resistivities of SnO2 and TiO2 crystals were measured to be 1.4 × 106 and 5.6 × 104 Ω · cm at 25°C, respectively.

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