Improved spatial resolution diffusion length measurements in imperfect silicon
- 1 March 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (3) , 1741-1744
- https://doi.org/10.1063/1.331643
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Electron-Beam-Induced Currents in SemiconductorsAnnual Review of Materials Science, 1981
- Advances in the electrical assessment of semiconductors using the scanning electron microscopeJournal of Microscopy, 1980
- Electron-beam-induced current characterization of polycrystalline silicon solar cellsSolar Cells, 1980
- Combined scanning (EBIC) and transmission electron microscopic investigations of dislocations in semiconductorsPhysica Status Solidi (a), 1979
- Spatial resolution of SEM-EBIC imagesSolid-State Electronics, 1979
- The growth of EFG silicon ribbonsJournal of Crystal Growth, 1977
- Surface Photovoltage Method Extended to Silicon Solar Cell JunctionJournal of the Electrochemical Society, 1974
- Penetration and energy-loss theory of electrons in solid targetsJournal of Physics D: Applied Physics, 1972