Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (8) , 1241-1246
- https://doi.org/10.1109/16.2543
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- FET Characterization using gated-TLM structureIEEE Transactions on Electron Devices, 1985
- Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FET'sIEEE Transactions on Electron Devices, 1985
- Analytical models of ion-implanted GaAs FET'sIEEE Transactions on Electron Devices, 1985
- New modeling of GaAs MESFET'sIEEE Transactions on Electron Devices, 1983