Measurement of bulk lifetime and surface recombination velocity by infrared absorption due to pulsed optical excitation
- 1 January 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (1) , 519-521
- https://doi.org/10.1063/1.348933
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- A contactless method for determination of carrier lifetime, surface recombination velocity, and diffusion constant in semiconductorsJournal of Applied Physics, 1988
- Lifetime measurements in semiconductors by infrared absorption due to pulsed optical excitationApplied Physics Letters, 1987
- Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocityJournal of Applied Physics, 1987
- Contactless measurement of bulk free-carrier lifetime in cast polycrystalline silicon ingotsJournal of Applied Physics, 1986
- I n s i t u investigation of transport in semiconductors: A contactless approachApplied Physics Letters, 1985
- Lifetime measurement in Hg0.7Cd0.3Te by population modulationApplied Physics Letters, 1981
- Measurement of Free-Carrier Lifetimes in GaP by Photoinduced Modulation of Infrared AbsorptionJournal of Applied Physics, 1971