Intra- and inter-valence-band electronic Raman scattering in heavily dopedp-GaAs

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Abstract
Two features have been observed in the emission spectra of heavily Zn-doped GaAs, with Stokes shifts in the energy range between 10 and 400 meV. They are attributed to intra- and inter-valence-band electronic Raman scattering involving the heavy- and light-hole valence bands. The measured Stokes shifts of these features depend on the incident photon energy and on the free-hole concentrations of the samples. Both dependences can be explained by means of the following resonant Raman process: from the valence bands to intermediate states in the conduction band and back to empty valence states near the Fermi level. These processes also account semiquantitatively for the dependence of the observed structure on the polarization of incident and scattered light.