Fabrication of all oxide transparent p–n homojunction using bipolar CuInO2 semiconducting oxide with delafossite structure
- 29 November 2001
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 121 (1) , 15-17
- https://doi.org/10.1016/s0038-1098(01)00439-2
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Electronic structure and optoelectronic properties of transparent p-type conducting CuAlO2Journal of Applied Physics, 2000
- Transparent p-type conducting CuScO2+x filmsApplied Physics Letters, 2000
- Transparent p-Type Conducting Oxides: Design and Fabrication of p-n HeterojunctionsMRS Bulletin, 2000
- Current injection emission from a transparent p–n junction composed of p-SrCu2O2/n-ZnOApplied Physics Letters, 2000
- Nanocrystalline p-type transparent Cu–Al–O semiconductor prepared by chemical-vapor deposition with Cu(acac)2 and Al(acac)3 precursorsApplied Physics Letters, 2000
- UV-emitting diode composed of transparent oxidesemiconductors: p -SrCu 2 O 2 / n -ZnOElectronics Letters, 2000
- Transparent Conducting Oxides Based on the Spinel StructureJournal of the American Ceramic Society, 1999
- Thin Film Growth of Transparent p-type CuAlO[sub 2]Electrochemical and Solid-State Letters, 1999
- SrCu 2 O 2 : A p-type conductive oxide with wide band gapApplied Physics Letters, 1998
- n -type electrical conduction in transparent thin films of delafossite-type AgInO2Applied Physics Letters, 1998