Scaling in a solid-on-solid model of epitaxial growth
- 15 November 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 46 (19) , 12896-12898
- https://doi.org/10.1103/physrevb.46.12896
Abstract
The exponents that characterize the asymptotic scaling behavior of a solid-on-solid model of epitaxial growth are obtained from Monte Carlo simulations in several substrate dimensions. This model has been used successfully in the past for quantitative analysis of molecular-beam-epitaxy experiments in the transient regime. The exponents in d=1, 2, and 3 substrate dimensions agree with those predicted on the basis of an analytic model proposed by Villain and by Lai and Das Sarma. In d=1 we find a crossover from the scaling behavior of a linear model.Keywords
This publication has 18 references indexed in Scilit:
- Equations of motion for epitaxial growthSurface Science, 1992
- Morphological model of reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on GaAs(001)Applied Physics Letters, 1992
- Kinetic growth with surface relaxation: Continuum versus atomistic modelsPhysical Review Letters, 1991
- Surface diffusion and fluctuations of growing interfacesPhysical Review Letters, 1991
- Growth with Surface DiffusionEurophysics Letters, 1990
- Dynamic scaling and phase transitions in interface growthPhysica A: Statistical Mechanics and its Applications, 1990
- Scaling of the active zone in the Eden process on percolation networks and the ballistic deposition modelJournal of Physics A: General Physics, 1985
- The Technology and Physics of Molecular Beam EpitaxyPublished by Springer Nature ,1985
- Simulation of Crystal Growth with Surface DiffusionJournal of Applied Physics, 1972
- Theory of Thermal GroovingJournal of Applied Physics, 1957