Scaled AlInAs/InGaAs and InP/InGaAs heterostructure bipolar transistors

• 1 November 1989
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
• Vol. 36  (11) , 2602
• https://doi.org/10.1109/16.43699

Abstract

Keywords

• EHF
• SCALING
• BIPOLAR TRANSISTOR
• CUTOFF FREQUENCY
• ELECTRON EMISSION
• BIPOLAR TRANSISTORS
• PARASITICS
• CIRCUITS
• GALLIUM ARSENIDE