Horizontal Bridgman growth of large high quality Cd1−yZnyTe crystals
- 30 January 1993
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 16 (1-3) , 44-47
- https://doi.org/10.1016/0921-5107(93)90010-k
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Basic problems of vertical Bridgman growth of CdTeMaterials Science and Engineering: B, 1993
- Surface tension of II–VI compounds and contact angle on glassy carbonJournal of Crystal Growth, 1992
- Cdte and CdZnTe crystal growth by horizontal bridgman techniqueJournal of Crystal Growth, 1990
- Surface tension and contact angle of molten semiconductor compoundsJournal of Crystal Growth, 1990
- Dependence of Resistivites of Cadmium Telluride on Residual Gas Pressure in Ampoules during PreparationJapanese Journal of Applied Physics, 1989
- Solution hardening and dislocation density reduction in CdTe crystals by Zn additionJournal of Crystal Growth, 1988
- Neutralization of acceptor and donor impurities in hydrogenated CdTeJournal of Crystal Growth, 1988
- Growth and structural properties of low defect, sub-grain free CdTe substrates grown by the horizontal bridgman techniqueJournal of Electronic Materials, 1986