Abstract
The surface sites in In atoms deposited to a coverage of 0.013 monolayer onto a stepped Cu(100) surface were determined with low-energy ion scattering. This was done for various deposition temperatures in the range 63–300 K. The mobilities of In atoms on the terraces and along steps were deduced from the deposition-temperature dependence of the fractions of In atoms occupying different sites. It was found that, with increasing temperature, In adatoms first migrate to step edges to form one- and two-dimensional clusters and then are incorporated into the terraces at near-substitutional sites.

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