Fabrication of a heterodyne receiver OEIC with optimized integration process using three MOVPE growth steps only
- 1 January 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 8 (1) , 75-77
- https://doi.org/10.1109/68.475783
Abstract
An optimized integration process is reported requiring only three epitaxial growth steps for the fabrication of an OEIC encompassing a single-mode laser, a waveguide element, and fast photodiodes. The process was applied to the fabrication of a heterodyne receiver including a semi-insulating buried heterostructure (SIBH)-DFB-laser with an output power of 14 mW and a side-mode suppression ratio greater than 40 dB, a 3-dB coupler, and high-speed balanced photodiodes with a bandwidth of 9 GHz. The laser can also be used as a transmitter laser exhibiting a modulation bandwidth of 11 GHz.Keywords
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