Transistor action in Si/CoSi2/Si heterostructures
- 15 July 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (2) , 151-153
- https://doi.org/10.1063/1.96245
Abstract
We report transistor action in a Si/CoSi2/Si structure. The thin silicide layer (<100 Å), which acts as the base, is a single‐crystal metal, essentially continuous and locally exhibiting atomically perfect interfaces with Si. The transistor action is manifested by a common base current gain α as high as 0.6 and a voltage gain greater than 10.Keywords
This publication has 7 references indexed in Scilit:
- Transistor effect in monolithic Si/CoSi 2 /Si epitaxial structuresElectronics Letters, 1984
- Schottky barrier heights of single crystal silicides on Si(111)Journal of Vacuum Science & Technology B, 1984
- Electrical transport properties of CoSi2 and NiSi2 thin filmsApplied Physics Letters, 1984
- Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiEpitaxial StructuresPhysical Review Letters, 1983
- Silicon/metal silicide heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1980
- Double heteroepitaxy in the Si (111)/CoSi2/Si structureApplied Physics Letters, 1980
- Ballistic Mean Free Path Measurements of Hot Electrons in Au FilmsPhysical Review Letters, 1965