The application of high resolution rutherford backscattering to the measurement of ion ranges in Si and Al
- 1 January 1975
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 25 (1) , 55-56
- https://doi.org/10.1080/00337577508242056
Abstract
Ion implantation is now finding applications in many diverse fields1, 2, 3 in addition to its established use for the fabrication of electronic devices. For such purposes it is essential that fundamental data on the spatial distribution of implanted ions be available. The Lindhard, Scharff and Schiøtt (LSS) theory4 for the slowing down of energetic ions in solids enables range distributions in amorphous solids to be predicted. Measurements of ion ranges at low doses using a variety of techniques have proved the general validity of this theory.5 In some circumstances, however, the conditions employed in an implantation experiment may produce a range profile different to that predicted theoretically, and hence direct experimental measurement becomes essential.Keywords
This publication has 6 references indexed in Scilit:
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- Range and stopping power effects obtained from high resolution rutherford backscattering analysis of implanted targetsRadiation Effects, 1974
- Applications of Ion Beams to MetalsPublished by Springer Nature ,1974
- Heavy ion ranges at 100 keV in aluminiumPhysics Letters A, 1973
- Metallurgical applications of ion implantation and ion bombardmentVacuum, 1973
- Defect studies in crystals by means of channelingCanadian Journal of Physics, 1968