Micromachined vertical hall magnetic field sensor in standard complementary metal oxide semiconductor technology

22 June 1992

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 60 (25) , 3188-3190
https://doi.org/10.1063/1.106738

Abstract

A novel vertical Hall magnetic field sensor which incorporates two important microsensor features is presented. First, the device is fabricated using a standard complementary metal oxide semiconductor (or CMOS) process and therefore possesses all characteristics inherent with integrated circuitmanufacturing. Second, the magnetic field sensor is subjected to a post‐processing step which involves CMOS‐compatible micromachining techniques. This combination of micromachining and CMOS processing led to the superior results for a micromachined sensor when compared with a non‐micromachined magnetic field sensor.

Keywords

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