Fabrication of n- and p-channel in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing

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Abstract
Focused laser beam writing is applied for thermally activated diffusion of dopants into strained Si/Ge modulation‐doped heterostructures. Lateral p‐ and n‐type potential barriers of sub‐μm width are achieved by local diffusion of boron and antimony into n‐ and p‐type heterostructures, respectively. The potential modulation is determined from the temperature dependence of the thermionic current over the barrier. These npn and pnp structures can be used to fabricate in‐plane‐gate transistors which show transistor action up to room temperature.

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