Pulsed ionizing radiation recovery characteristics of MSI GaAs integrated circuits

1 July 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 2 (7) , 173-176
https://doi.org/10.1109/edl.1981.25388

Abstract

GaAs Schottky Diode FET Logic Divide-by 8 circuits have been characterized for transient response when exposed to 20 ns FXR pulses at 25°C. A logic upset threshold of about 10⁸rad/s was observed. At dose rates of 2 × 10¹⁰rads/s, functional operation was restored in 5 µs. A discussion of logic upset mechanisms is presented, attempting to explain both short and long term recovery observations.

Keywords

PULSE CIRCUITS
IONIZING RADIATION
GALLIUM ARSENIDE
CIRCUIT TESTING
FETS
PULSE MEASUREMENTS
LOGIC GATES
FLIP-FLOPS
SCHOTTKY DIODES
LOGIC CIRCUITS

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