The initial formation of several metal–GaAs(110) interfaces has recently been reexamined by evaporating the metal on the semiconductor surface cooled to 70–100 K. Overlayer homogeneity and metal-induced unrelaxation are increased at low temperature (LT), whereas clustering, interdiffusion, and chemical reactions are substantially inhibited. Ag and Au interfaces with n- and p-GaAs were studied with soft x-ray and ultraviolet photoemission spectroscopies (SXPS, UPS) and low-energy electron diffraction. Both interfaces displayed the very asymmetric LT pinning of the Fermi level (EF) reported earlier: (1) fast EF movement at ultralow coverage (2 Å) pinning and appearance of metallic character in the overlayer.