Transient analysis of MOS transistors
- 1 August 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (8) , 1571-1578
- https://doi.org/10.1109/t-ed.1980.20072
Abstract
Two methods have been developed for analyzing MOS transients. One method is analytical and uses the quasi-static approximation. It is useful when the stray capacitance dominates MOS transient performance. The second method is numerical and uses a new boundary value method which can be applied over a wide range of operating speeds. This method includes secondary effects and nonuniform doping, The validity and limits for both methods are verified by comparison with measurements. Transit-time delay and charge-pumping effects are also analyzed using the numerical method. Examples of short-channel behavior of MOS devices are included.Keywords
This publication has 7 references indexed in Scilit:
- A simplified two-dimensional numerical analysis of MOS devices—DC caseIEEE Transactions on Electron Devices, 1980
- Calculation of the turn-on behavior of mostSolid-State Electronics, 1974
- A two-dimensional mathematical model of the insulated-gate field-effect transistorSolid-State Electronics, 1973
- An accurate two-dimensional numerical analysis of the MOS transistorSolid-State Electronics, 1972
- Charge pumping in MOS devicesIEEE Transactions on Electron Devices, 1969
- The equivalent circuit of an arbitrarily doped field-effect transistorSolid-State Electronics, 1965
- Small-signal, high-frequency theory of field-effect transistorsIEEE Transactions on Electron Devices, 1964