Theory of optologically disordered systems. II. Impurity bands in a donor-pair approximation
- 10 April 1981
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 14 (10) , 1445-1455
- https://doi.org/10.1088/0022-3719/14/10/012
Abstract
For pt.I see ibid., vol.14, p.21 (1981). The recently introduced random-cell model for topologically disordered systems is used to investigate the low electron-hole states of a doped semiconductor. Making use of a donor-pair approximation the authors find the probability distribution of the matrix elements diagonal in the random-cell representation. Low and intermediate impurity concentrations are considered. The results indicate a complicated evolution of the excitation spectrum.Keywords
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