Effect of orientation on the Schottky barrier height of thermodynamically stable epitaxial metal/GaAs structures
- 1 July 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 10 (4) , 1946-1953
- https://doi.org/10.1116/1.578120
Abstract
The use of thermodynamically stable epitaxial metal/GaAs contacts fabricated by molecular-beam epitaxy has enabled detailed studies of Schottky barrier formation on well characterized and controlled structures. The effects of lattice mismatch, annealing and substrate orientation on the barrier height of Sc1−xErxAs semimetal contacts on n-GaAs are studied. The barrier height could be varied from ∼1.03 eV for Sc1−xErxAs films grown at 350–400 °C and annealed at ∼600 °C on (100) GaAs to ∼0.63 eV for films grown at ∼600 °C on (1̄1̄1̄) GaAs.Keywords
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