Silicide layer growth rates in Mo/Si multilayers
- 1 December 1993
- journal article
- Published by Optica Publishing Group in Applied Optics
- Vol. 32 (34) , 6975-6980
- https://doi.org/10.1364/ao.32.006975
Abstract
Optics InfoBase is the Optical Society's online library for flagship journals, partnered and copublished journals, and recent proceedings from OSA conferences.Keywords
This publication has 13 references indexed in Scilit:
- Diffusion and structural relaxation in amorphous Mo/Si multilayersPublished by Elsevier ,2003
- Fabrication of high-reflectance Mo–Si multilayer mirrors by planar-magnetron sputteringJournal of Vacuum Science & Technology A, 1991
- Thermally induced structural modification of Mo-Si multilayersJournal of Applied Physics, 1990
- Interfacial reactions on annealing molybdenum-silicon multilayersJournal of Applied Physics, 1989
- The scattering of x rays from nonideal multilayer structuresJournal of Applied Physics, 1989
- Interdiffusion and structural relaxation in Mo/Si multilayer filmsJournal of Applied Physics, 1988
- Cross-sectional transmission electron microscope study of the growth kinetics of hexagonal MoSi2 on (001)SiJournal of Applied Physics, 1987
- High-resolution electron microscopy study of x-ray multilayer structuresJournal of Applied Physics, 1987
- Molybdenum-silicon multilayer mirrors for the extreme ultravioletApplied Optics, 1985
- Reaction kinetics of molybdenum thin films on silicon (111) surfaceJournal of Applied Physics, 1978