Pt–Ga Ohmic contacts to n-ZnO using focused ion beams
- 1 October 2002
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 46 (10) , 1665-1668
- https://doi.org/10.1016/s0038-1101(02)00176-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphireApplied Physics Letters, 1999
- Pt and W ohmic contacts to p-6H-SiC by focused ion beam direct-write depositionJournal of Electronic Materials, 1999
- Properties of gallium-doped ZnO deposited onto glass by spray pyrolysisSolar Energy Materials and Solar Cells, 1998
- Effects of surface cleaning on electrical properties for Ni contacts to p-type ZnSeJournal of Vacuum Science & Technology B, 1996
- The oxygen coordination of metal ions in phosphate and silicate glasses studied by a combination of x-ray and neutron diffractionPhysica Scripta, 1995
- Formation of Ohmic Contacts to ZnOReview of Scientific Instruments, 1970