Observation of spectral hole burning in photocurrentspectrum of InAs self-assembled quantum dots embedded in pin diode

11 September 1997

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 33 (19) , 1655-1657
https://doi.org/10.1049/el:19971096

Abstract

The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.

Keywords

WAVELENGTH-DOMAIN MULTIPLICITY
ELECTRIC FIELD
OPTICAL MEMORY
INAS
PIN DIODE
INAS SELF-ASSEMBLED QUANTUM DOTS
PHOTOCURRENT SPECTRUM
SPECTRAL HOLE BURNING
SPECTRAL HOLE DEPTH

This publication has 1 reference indexed in Scilit:

Room temperature CW operation at the ground stateof self-formed quantum dot lasers with multi-stacked dot layer
Electronics Letters, 1996