H 2 S gas sensing mechanism of SnO2 films with ultrathin CuO dotted islands
- 15 August 2002
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 92 (4) , 2172-2180
- https://doi.org/10.1063/1.1490154
Abstract
gas interaction mechanisms of sputtered and bilayer sensors with a varying distribution of the Cu catalyst on are studied using Pt interdigital electrodes within the sensing film. Sensitivity to gas is investigated in the range 20–1200 ppm. Changes induced on the surface, the interface, and the internal bulk region of the sensing film upon exposure to have been analyzed to explain the increasing sensitivity of three different sensors and with CuO islands. film covered with 0.6 mm diameter ultrathin (∼10 nm) CuO dots is found to exhibit a high sensitivity of at a low operating temperature of 150 °C. A response speed of 14 s for 20 ppm of and a fast recovery time of 118 s in flowing air have been measured. The presence of ultrathin CuO dotted islands allow effective removal of adsorbed oxygen from the uncovered surface due to spillover of hydrogen dissociated from the interaction, and the spillover mechanism is sensed through the observed fast response characteristics, and the high sensitivity of the -dot sensor.
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