Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding
- 1 September 2010
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 19492081,p. 22-24
- https://doi.org/10.1109/group4.2010.5643441
Abstract
An InP/Silicon hybrid laser based on double taper adiabatic mode transfer and BCB bonding is demonstrated, exhibiting nearly 1 mW output power at room temperature in pulsed operation regime. Such a laser enables potentially a low threshold current and a high power conversion efficiency.Keywords
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