Observation of Layer Structure in Dislocation Free Silicon Crystals with the Use of X-ray Anomalous Transmission
- 1 January 1960
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 15 (1) , 206-207
- https://doi.org/10.1143/jpsj.15.206
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- X-ray Observation of the Strain Field in Germanium Single Crystals with the Use of the Anomalous TransmissionJournal of the Physics Society Japan, 1959
- Growth of Silicon Crystals Free from DislocationsJournal of Applied Physics, 1959
- Anwendung der Parallelstrahlmethode im Durchstrahlungsfall zur Prüfung des Kristallinneren mit Röntgen-StrahlenZeitschrift für Naturforschung A, 1958
- Schatten von Versetzungslinien im Röntgen-DiagrammZeitschrift für Naturforschung A, 1958